aug. 1999 collector-emitter voltage collector current input voltage clamping diode reverse voltage power dissipation operating temperature storage temperature pin configuration mitsubishi semiconductor m54532p/fp 4-unit 1.5a darlington transistor array with clamp diode description m54532p and M54532FP are four-circuit darlington transis- tor arrays with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 50v) high-current driving (ic(max) = 1.5a) with clamping diodes wide operating temperature range (ta = C20 to +75 c) application drives of relays and printers, digit drives of indication ele- ments (leds and lamps), and power amplification function the m54532p and M54532FP each have four circuits con- sisting of npn darlington transistors. they have resistance of 340 w between input transistor bases and input pins. a clamping diode is provided between each output pin (collec- tor) and com pin. the output transistor emitters are all con- nected to the gnd pin. the collector current is 1.5a maximum. collector-emitter supply voltage is 50v maximum. the M54532FP is enclosed in a molded small flat package, enabling space-saving design. circuit diagram i f v a v v w c c ratings symbol parameter conditions unit C0.5 ~ +50 1.5 C0.5 ~ +10 50 1.5 1.25 1.92(p)/1.00(fp) C20 ~ +75 C55 ~ +125 a 5.5k 3k 340 com gnd input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the four circuits share the com and gnd. output, h current per circuit output, l pulse width 10ms, duty cycle 5% pulse width 100ms, duty cycle 3 5% ta = 25 c, when mounted on board absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) v ceo i c v i v r p d t opr t stg clamping diode forward current 1 output4 input4 input3 output3 output1 input1 o1 ? in1 ? input2 in2 ? com common com common gnd gnd nc nc 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o3 ? in3 output2 o2 ? ? in4 ? o4 y t ? 16p4(p) package type 16p2n-a(fp) nc : no connection
aug. 1999 symbol unit parameter test conditions limits min typ max switching characteristics (unless otherwise noted, ta = 25 c) turn-on time turn-off time c l = 15pf (note 1) v o v ih v il 2.2 1.7 8.5 100 2.3 v ma m a v i ceo = 100 m a i i = 2ma, i c = 1.25a i i = 2ma, i c = 0.7a v i = 3v v r = 50v i f = 1.25a v ce = 4v, i c = 1a, ta = 25 c v (br) ceo i i i r v f h fe mitsubishi semiconductor m54532p/fp 4-unit 1.5a darlington transistor array with clamp diode v v v 0 3 0 50 6 0.4 0 0 1.25 0.7 a v ce (sat) 50 800 1.3 1.1 5 1.6 7000 v + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns t on t off 10 500 timing diagram note 1 test circuit pg 50 w c l measured device open v o r l input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 3v p-p (2) input-output conditions : r l = 8.3 w , v o = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes ton 50% 50% 50% 50% toff input output recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) limits unit min typ max parameter symbol i c collector current (current per 1 cir- cuit when 4 circuits are coming on si- multaneously) output voltage duty cycle p : no more than 4% fp : no more than 2% duty cycle p : no more than 18% fp : no more than 9% h input voltage l input voltage collector-emitter breakdown voltage input current clamping diode reverse current clamping diode forward voltage dc amplification factor symbol unit parameter test conditions limits min typ + max collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c)
aug. 1999 mitsubishi semiconductor m54532p/fp 4-unit 1.5a darlington transistor array with clamp diode typical characteristics thermal derating factor characteristics ambient temperature ta (?) M54532FP m54532p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 i i = 2ma output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) 0 0 0.5 1.0 ta = ?0? ta = 25? ta = 75? 1.5 2.0 0.5 1.0 1.5 2.0 collector current ic (a) duty-cycle-collector characteristics (m54532p) duty cycle (%) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? 0 0 0.5 1.0 1.5 2.0 a ? 20 40 60 80 100 collector current ic (a) duty cycle (%) 0 0 0.5 1.0 1.5 2.0 a ? 20 40 60 80 100 collector current ic (a) duty cycle (%) 0 0 0.5 1.0 1.5 2.0 a ? 20 40 60 80 100 collector current ic (a) duty cycle (%) 0 0 0.5 1.0 1.5 2.0 a ? 20 40 60 80 100 collector current ic (a) duty-cycle-collector characteristics (m54532p) ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 25? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?a = 75? duty-cycle-collector characteristics (M54532FP) duty-cycle-collector characteristics (M54532FP)
aug. 1999 mitsubishi semiconductor m54532p/fp 4-unit 1.5a darlington transistor array with clamp diode dc amplification factor collector current characteristics collector current ic (ma) 10 1 v ce = 4v ta = 25? ta = 75? ta = ?0? 5 3 2 7 10 5 5 3 2 7 10 4 5 3 2 7 10 3 10 2 10 2 23 57 10 3 23 57 10 4 23 57 dc amplification factor h fe grounded emitter transfer characteristics input voltage v i (v) 0 v ce = 4v ta = 75? ta = ?0? ta = 25? 0.4 0.8 1.2 1.6 0 0.5 1.0 1.5 2.0 collector current ic (a) input characteristics input voltage v i (v) 0 ta = 25? ta = 75? ta = ?0? 10 5 15 20 25 0 246810 input current i i (ma) clamping diode characteristics forward bias voltage v f (v) 0 0 0.5 1.0 ta = ?0? ta = 25? ta = 75? 1.5 2.0 0.5 1.0 1.5 2.0 forward bias current i f (a)
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